specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 1 of 4 march 2008 ah116 ? watt, high linearity ingap hbt amplifier product features ? 800 ? 1000 mhz ? 17.5 db gain @ 900 mhz ? +28 dbm p1db ? +43 dbm output ip3 ? +5v single positive supply ? lead-free/green/rohs-compliant soic-8 smt pkg. applications ? final stage amplifiers for repeaters ? mobile infrastructure product description the ah116 is a high dynamic range driver amplifier in a low-cost surface mount package. the ingap/gaas hbt is able to achieve high performance for various nar row- band tuned application circuits with up to +43 dbm oip3 and +28 dbm of compressed 1-db power and is housed in a lead-free/green/rohs-compliant soic-8 package. all devices are 100% rf and dc tested. the product is targeted for use as driver amplifier s for wireless infrastructure where high linearity and me dium power is required. the internal active bias allows the ah116 to maintain high linearity over temperature a nd operate directly off a +5 v supply. this combinati on makes the device an excellent fit for transceiver l ine cards and power amplifiers in current and next gene ration multi-carrier 3g base stations. functional diagram function pin no. vref 1 input 3 output 6, 7 vbias 8 gnd backside paddle n/c or gnd 2, 4, 5 specifications (1) parameters units min typ max frequency range mhz 900 gain db 15 17.5 input r.l. db 18 output r.l. db 7 output p1db dbm +27 +28.7 output ip3 (2) dbm +42 +43 is-95a channel power @ -45 dbc acpr dbm +23 noise figure db 7 operating current range (3) ma 200 250 300 device voltage v +5 1. test conditions unless otherwise noted: 25 oc, +5v sup ply, 900 mhz, in tuned application circuit. 2. 3oip measured with two tones at an output power of +13 dbm/tone separated by 1 mhz. the suppression on the largest im3 product is used to calculate t he 3oip using a 2:1 rule. 3. this corresponds to the quiescent current or operating c urrent under small-signal conditions. it is expected that the current can increase up to 300ma at p1db. absolute maximum rating parameter rating storage temperature -65 to +150 c rf input power (continuous) +22 dbm device voltage +8 v device current 400 ma device power 2 w thermal resistance, rth 62 c/w junction temperature +200 c operation of this device above any of these parameters ma y cause permanent damage. typical performance (1) parameters units typical frequency mhz 900 gain db 17.5 s11 db -18 s22 db -7 output p1db dbm +28.7 output ip3 (2) dbm +43 is-95a channel power @ -45 dbc acpr dbm +23 noise figure db 7 supply bias +5 v @ 250 ma ordering information part no. description AH116-S8G ? watt, high linearity ingap hbt amplifier (lead-free/green/rohs-compliant soic-8 pkg) ah116-s8pcb900 900 mhz evaluation board standard tape / reel size = 500 pieces on a 7? reel 1 2 3 4 8 7 6 5
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 2 of 4 march 2008 ah116 ? watt, high linearity ingap hbt amplifier typical device data s-parameters (v cc = +5 v, i cc = 250 ma, t = 25 c, calibrated to device leads) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 frequency (ghz) gain_maximum stable gain 0 5 10 15 20 25 30 gain (db) db(|s[2,1]|) db(gmax) 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s11 swp max 5.05ghz swp min 0.05ghz 0 1.0 1.0 -1.0 10.0 1 0 . 0 - 1 0 . 0 5.0 5 . 0 - 5 . 0 2.0 2 . 0 - 2 . 0 3.0 3 . 0 - 3 . 0 4.0 4 . 0 - 4 . 0 0.2 0 . 2 - 0 . 2 0.4 0 . 4 - 0 . 4 0.6 0 . 6 - 0 . 6 0.8 0 . 8 - 0 . 8 s22 swp max 5.05ghz swp min 0.05ghz notes: the gain for the unmatched device in 50 ohm system is shown as the trace in black color. for a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. the maximum stable gai n is shown in the dashed red line. the return loss plots are shown from 50 ? 5050 mhz, with markers placed at 0.5 ? 5.05 ghz in 0.5 ghz i ncrements. s-parameters (v cc = +5 v, i cc = 250 ma, t = 25 c, unmatched 50 ohm system, calibrated to device le ads) freq (mhz) s11 (db) s21 (db) s21 (ang) s12 (db) s12 (ang) s22 (db) s22 (ang) 50 -2.72 24.16 133.35 -36.72 29.75 -2.23 -102.97 100 -2.25 20.33 124.95 -35.31 13.96 -3.08 -137.03 200 -2.31 17.23 119.37 -34.90 2.32 -3.32 -159.63 400 -3.08 15.63 98.28 -33.62 -16.36 -3.48 -172.70 600 -5.79 15.58 69.70 -32.10 -37.73 -2.87 -176.25 800 -19.72 15.22 25.60 -31.19 -78.95 -2.27 -179.74 1000 -6.06 11.91 -22.67 -33.26 -129.67 -1.40 173.15 device s-parameters are available for download from the website at: http://www.wj.com application circuit pc board layout circuit board material: .014? getek, 4 - layer, 1 oz copper, microstrip line details: width = .026? , spacing = .026? the silk screen markers ?a?, ?b?, ?c?, etc. and ?1?, ?2?, ?3?, etc. are used as placemark ers for the input and output tuning shunt capac itors ? c8 and c9. the markers and vias are spaced in .050? increments .
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 3 of 4 march 2008 ah116 ? watt, high linearity ingap hbt amplifier 900 mhz application circuit (ah116-s8pcb900) typical rf performance at 25 c frequency 900 mhz s21 ? gain 17.5 db s11 ? input return loss -18 db s22 ? output return loss -7 db output p1db +28.7 dbm output ip3 (+17 dbm / tone, 1 mhz spacing) +43 dbm channel power (@-45 dbc acpr, is-95 9 channels fwd) +23 dbm noise figure 7 db device / supply voltage +5 v quiescent current 250 ma s21 vs frequency 10 12 14 16 18 20 840 860 880 900 920 940 frequency (mhz) s21 (db) +25c +85c -40c s11 vs. frequency -35 -30 -25 -20 -15 -10 -5 0 840 860 880 900 920 940 frequency (mhz) s11 (db) +25c +85c -40c s22 vs. frequency -35 -30 -25 -20 -15 -10 -5 0 840 860 880 900 920 940 frequency (mhz) s22 (db) +25c +85c -40c noise figure vs. frequency 0 2 4 6 8 10 840 860 880 900 920 940 frequency (mhz) nf (db) +25c +80c -40c p1 db vs. frequency 20 22 24 26 28 30 840 860 880 900 920 940 frequency (mhz) p1 db (dbm) +25c +85c -40c acpr vs. channel power is-95, 9 ch. fw d, 885khz meas bw, 900 mhz -80 -75 -70 -65 -60 -55 -50 -45 -40 18 19 20 21 22 23 24 output channel power (dbm) acpr (dbm) +25c +85c -40c oip3 vs. frequency +25, +13 dbm / tone 35 37 39 41 43 45 840 860 880 900 920 940 frequency (mhz) oip3 (dbm) oip3 vs. temperature freq. = 900, 901 mhz, +13 dbm /tone 35 37 39 41 43 45 -40 -15 10 35 60 85 temperature (c) oip3 (dbm) oip3 vs. output power freq. = 900, 901 mhz, +25c 35 37 39 41 43 45 8 10 12 14 16 18 20 output power (dbm) oip3 (dbm)
specifications and information are subject to change wit hout notice wj communications, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6621 ? e-mail: sales@wj.com ? web site: www.wj.com, www.triquint.com page 4 of 4 march 2008 ah116 ? watt, high linearity ingap hbt amplifier AH116-S8G (lead-free package) mechanical informatio n this package is lead-free/green/rohs-compliant. the plating material on the leads is nipdau. it is c ompatible with both lead-free (maximum 260 c reflow temperature) and lead (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern product marking the component will be marked with an ?ah116g? designator with an alphanumeric lot code on the top surface of the package. the obsolete tin-lead package is marked with an ?ah116-s8? or ?ecp052g? designator followed by an alphanumeric lot code. tape and reel specifications for this part are located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 mounting config. notes 1. ground / thermal vias are critical for the proper per formance of this device. vias should use a .35mm (#80 / .0135?) diameter drill an d have a final plated thru diameter of .25 mm (.010?). 2. add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. mounting screws can be added near the part to fasten th e board to a heatsink. ensure that the ground / thermal via region con tacts the heatsink. 4. do not put solder mask on the backside of the pc boa rd in the region where the board contacts the heatsink. 5. rf trace width depends upon the pc board material and construction. 6. use 1 oz. copper minimum. 7. all dimensions are in millimeters (inches). angl es are in degrees.
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